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hexfet power mosfet notes through are on page 10 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 benefits very low r ds(on) at 4.5v v gs low gate charge fully characterized avalanche voltage and current applications synchronous mosfet for notebook processor power secondary synchronous rectification for isolated dc-dc converters synchronous fet for non-isolated dc-dc converters lead-free v dss r ds(on) max qg (typ.) 40v 5.0m @v gs = 10v 33nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient ??? 50 -55 to + 150 2.5 0.02 1.6 max. 18 14 140 20 40

!" form quantity tube/bulk 95 irf7842pbf tape and reel 4000 irf7842trpbf package type standard pack orderable part number irf7842pbf so-8 base part number

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static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 40 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.037 ??? v/c r ds(on) static drain-to-source on-resistance ??? 4.0 5.0 m ??? 4.7 5.9 v gs(th) gate threshold voltage 1.35 ??? 2.25 v v gs(th) gate threshold voltage coefficient ??? - 5.6 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 81 ??? ??? s q g total gate charge ??? 33 50 q gs1 pre-vth gate-to-source charge ??? 9.6 ??? q gs2 post-vth gate-to-source charge ??? 2.8 ??? nc q gd gate-to-drain charge ??? 10 ??? q godr gate charge overdrive ??? 10.6 ??? q sw switch charge (q gs2 + q gd ) ??? 12.8 ??? q oss output charge ??? 18 ??? nc r g gate resistance ??? 1.3 2.6 t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 12 ??? t d(off) turn-off delay time ??? 21 ??? ns t f fall time ??? 5.0 ??? c iss input capacitance ??? 4500 ??? c oss output capacitance ??? 680 ??? pf c rss reverse transfer capacitance ??? 310 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 3.1 (body diode) a i sm pulsed source current ??? ??? 140 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 99 150 ns q rr reverse recovery charge ??? 11 17 nc ??? i d = 14a v gs = 0v v ds = 20v v gs = 4.5v, i d = 14a v gs = 4.5v typ. ??? v ds = v gs , i d = 250 a clamped inductive load v ds = 20v, i d = 14a v ds = 32v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v ds = 32v, v gs = 0v t j = 25c, i f = 14a, v dd = 20v di/dt = 100a/ s t j = 25c, i s = 14a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 17a mosfet symbol v ds = 16v, v gs = 0v v dd = 20v, v gs = 4.5v i d = 14a v ds = 20v conditions max. 50 14 ? = 1.0mhz
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60 s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 18a v gs = 10v

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fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20406080 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 30v vds= 20v i d = 14a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on)
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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t j , junction temperature (c) 0 2 4 6 8 10 12 14 16 18 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.8 1.2 1.6 2.0 2.4 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 10.48 0.138167 26.83 1.8582 12.69 44.8 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri
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fig 13c. maximum avalanche energy vs. drain current fig 14a. switching time test circuit fig 14b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1 s duty factor < 0.1% v dd v ds l d d.u.t + - fig 13b. unclamped inductive waveforms fig 13a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 12. on-resistance vs. gate voltage 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 0 4 8 12 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 18a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.7a 7.5a bottom 14a
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d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 16. gate charge test circuit fig 15.

for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ' ($'
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%% ? "#""&# fig 17. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
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so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4 . ou t l ine conf or ms t o j e de c ou t l ine ms -01 2aa. not e s : 1. dime ns ioning & t ole rancing per as me y14.5m-1994. 2. cont r ol l ing dime ns ion: mill ime t e r 3. dimensions are shown in millimeters [inches]. 5 dime ns ion doe s not incl ude mol d pr ot r us ions . 6 dime ns ion doe s not incl ude mol d pr ot r us ions . mold prot ru s ions not t o excee d 0.25 [.010]. 7 dime ns ion is t he le ngt h of l e ad f or s olde r ing t o a s u bs t rat e. mold prot ru s ions not t o excee d 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rect if ier logo f 7101 y = las t digit of t he ye ar part number lot code ww = we e k example: t his is an irf7101 (mos fet ) p = de s i gnat e s l e ad-f r e e product (optional) a = assembly site code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.5mh r g = 25 , i as = 14a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board - ' ..
/ , 01 ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level cons umer (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated data sheet based on corporate template. ? added qual level on page10. ? ? //

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